An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs

[1]  D. Delagebeaudeuf,et al.  Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET , 1982, IEEE Transactions on Electron Devices.

[2]  Y. Ayasli,et al.  DC and microwave models for Al x Ga 1-x As/GaAs high electron mobility transistors , 1984 .

[3]  M. Kurata,et al.  Analysis of high electron mobility transistors based on a two-dimensional numerical model , 1984, IEEE Electron Device Letters.

[4]  B. Vinter Subbands and charge control in a two‐dimensional electron gas field‐effect transistor , 1984 .

[5]  Frank Stern,et al.  Electron energy levels in GaAs- Ga 1 − x Al x As heterojunctions , 1984 .

[6]  K. Kwack,et al.  Calculation of the two-dimensional electron gas density at the Al x Ga 1-x As/GaAs heterointerface , 1986 .

[7]  M.L. Majewski An analytical DC model for the modulation-doped field-effect transistor , 1987, IEEE Transactions on Electron Devices.

[8]  G.N. Maracas,et al.  An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling , 1988, IEEE Electron Device Letters.

[9]  Yuji Ando,et al.  Analysis of charge control in pseudomorphic two-dimensional electron gas field-effect transistors , 1988 .

[10]  W. H. Ku,et al.  An analytical current-voltage characteristics model for high electron mobility transistors based on nonlinear charge-control formulation , 1989 .

[11]  S. Ng,et al.  A two-dimensional self-consistent numerical model for high electron mobility transistor , 1991 .

[12]  M. El Nokali,et al.  An analytical model for high electron mobility transistors , 1994 .

[13]  Hadis Morkoç,et al.  Emerging gallium nitride based devices , 1995, Proc. IEEE.

[14]  Peter M. Asbeck,et al.  Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors , 1997 .

[15]  R. Gaska,et al.  High-temperature performance of AlGaN/GaN HFETs on SiC substrates , 1997, IEEE Electron Device Letters.

[16]  P. Kozodoy,et al.  Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V , 1997, IEEE Electron Device Letters.

[17]  Nandita DasGupta,et al.  A new SPICE MOSFET Level 3-like model of HEMT's for circuit simulation , 1998 .

[18]  Umesh K. Mishra,et al.  GaN based microwave power HEMTs , 1998 .

[19]  Joan M. Redwing,et al.  Schottky barrier engineering in III-V nitrides via the piezoelectric effect , 1998 .

[20]  K. Doverspike,et al.  High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates , 1999, IEEE Electron Device Letters.

[21]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[22]  R. S. Gupta,et al.  Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications , 1999 .

[23]  R. Gupta,et al.  TRANSCONDUCTANCE EXTRACTION FOR PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR (ALGAAS/INGAAS) FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS , 1999 .

[24]  Y. Aoyagi,et al.  Influence of a piezoelectric field on the electron distribution in a double GaN/Al0.14Ga0.86N heterojunction , 1999 .

[25]  José Luis Sánchez-Rojas,et al.  Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis , 1999 .

[26]  M. M. Wong,et al.  Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure , 1999 .

[27]  John D. Albrecht,et al.  Extrinsic performance limitations of AlGaN/GaN heterostructure field effect TRANSISTORS , 1999 .

[28]  Edward T. Yu,et al.  Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors , 2000 .

[29]  R. Gupta,et al.  Temperature and aluminium composition dependent sheet carrier concentration at AlGaAs/GaAs interface , 2000 .

[30]  Shreepad Karmalkar,et al.  A simple yet comprehensive unified physical model of the 2D electron gas in delta-doped and uniformly doped high electron mobility transistors , 2000 .

[31]  Rashmi,et al.  Analytical model for dc characteristics and small‐signal parameters of AIGaN/GaN modulation‐doped field‐effect transistor for microwave circuit applications , 2000 .

[32]  M. Shur,et al.  GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates , 2000 .

[33]  R. Gupta,et al.  Frequency optimization of pseudomorphic modulation‐doped field‐effect transistor (AlGaAs/InGaAs) for microwave and millimeter‐wave applications , 2000 .

[34]  Walter Kruppa,et al.  Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .

[35]  Lester F. Eastman,et al.  Undoped AlGaN/GaN HEMTs for microwave power amplification , 2001 .