Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films

The formation of ultrathin silicide films of Ni1-xPtx at 450-850 degrees C is reported. Without Pt (x=0) and for t(Ni)= 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures f ...

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