Radioluminescence characterization of hot pressed, reaction bonded, and CVD SiC

Radioluminescence (RL) measurements of three types of silicon carbide, material considered for use in future fusion reactors, have been made to examine the potential of this technique as a possible way to evaluate in-situ the radiation damage during reactor irradiations. RL spectra taken during 1.8 MeV electron irradiation have a strong dependence on SiC type and irradiation time (dose), the intensity decreasing with irradiation dose for all samples. Reported reduction in crystallinity for HP SiC revealed by X-ray diffraction analysis following electron irradiation to 420 MGy, and the marked reduction of the main RL band by 200 MGy may be related, and that RL should be fully examined as a tool for in-situ characterization.