Semi-analytical modelling of short channel effects in Si double gate, tri-gate and gate all-around MOSFETs

An analytical expression for the three-dimensional potential distribution along the channel of short channel silicon multi-gate MOSFETs is described in weak inversion. The analytical solutions cover three different cases of multi-gate devices: Symmetrical double gate (DG), tri-gate (TG) and gate-all-around (GAA) MOSFETs. Using the three-dimensional potential distribution in the silicon film, the subthreshold drain current is calculated from which the threshold voltage and the subthreshold swing were extracted. The threshold voltage roll-off, the subthreshold swing and the drain-induced barrier lowering of the multi-gate devices are compared, showing the critical advantage of GAA structures concerning the short channel effects. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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