论文信息 - Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O2/NO Plasma Oxynitridation

Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O2/NO Plasma Oxynitridation

formed by Kr/O2/NO Plasma Oxynitridation Tomoyuki Suwa, Hiroto Takahashi, Yuki Kumagai, Genya Fujita, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi New Industry Creation Hatchery Center, Tohoku University, Graduate School of Engineering Tohoku University 6-6-10 Aza Aoba, Aramaki, Aoba, Sendai, Miyagi, 980-8579, Japan Phone: +81-22-795-3977, Fax: +81-22-795-3986, E-mail: suwa@fff.niche.tohoku.ac.jp

[1] T. Nakamura,et al. Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2] Katsuhiko Kubota,et al. Detailed observation of small leak current in flash memories with thin tunnel oxides , 1999 .

[3] H. Hazama,et al. Non-uniform current flow through thin oxide after Fowler-Nordheim current stress , 1996, Proceedings of International Reliability Physics Symposium.

[4] Andrea L. Lacaita,et al. A statistical model for SILC in flash memories , 2002 .