The foundation of a charge-sheet model for the thin-film MOSFET

Abstract Based on charge-sheet ideas, a physical model for the thin-film n -channel inversion-mode single-crystal MOSFET has been developed. This model, which is valid for moderate and strong inversion, describes analytically the front-channel charge density and accounts for the charge coupling between the front and the back gates. The utility of this model, which has a maximum relative error of less than 5%, follows from the elimination of the need to numerically evaluate the integral for the (front) channel charge density. This is the first step toward the development of a complete charge sheet model for the thin-film transistor.