Photoemission microscopy study of the two metal-insulator transitions in Cr-doped V2O3

We present a spectromicroscopy study of the two distinct metal-insulator transitions in (V1−xCrx)2O3, x = 0.011. The coexistence of metallic and insulating domains was observed with scanning photoelectron microscopy for both the paramagnetic insulator-paramagnetic metal and paramagnetic metal-antiferromagnetic insulator transitions, evidencing a clear correlation between their nucleation regions. Although these two transitions are very different in nature and underlying mechanism, in both cases the morphology of their phase separation is influenced by structural inhomogeneities. These results demonstrate the general relevance of strain caused by local lattice distortions in guiding the intrinsic tendency towards phase separation in Mott materials.

[1]  M Marsi,et al.  A microscopic view on the Mott transition in chromium-doped V(2)O(3). , 2010, Nature communications.

[2]  A. Bianco,et al.  Angle-resolved photoemission spectroscopy and imaging with a submicrometre probe at the SPECTROMICROSCOPY-3.2L beamline of Elettra. , 2010, Journal of synchrotron radiation.

[3]  J. Rueff,et al.  Quasiparticles at the Mott transition in V2O3: wave vector dependence and surface attenuation. , 2009, Physical review letters.

[4]  E. Tosatti,et al.  Surface dead layer for quasiparticles near a mott transition. , 2009, Physical review letters.

[5]  L. Baldassarre,et al.  Quasiparticle evolution and pseudogap formation in V 2 O 3 : An infrared spectroscopy study , 2007, 0710.1247.

[6]  Byung-Gyu Chae,et al.  Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging , 2007, Science.

[7]  A. N. Rubtsov,et al.  Enhanced crystal-field splitting and orbital-selective coherence induced by strong correlations in V 2 O 3 , 2007, cond-mat/0701263.

[8]  E. Stern,et al.  Strain-induced bond buckling and its role in insulating properties of Cr-doped V2O3. , 2006, Physical review letters.

[9]  S. Cheong,et al.  Direct observation of large electronic domains with memory effect in doped manganites. , 2004, Physical review letters.

[10]  K. Held,et al.  Electronic structure of paramagnetic V 2 O 3 : Strongly correlated metallic and Mott insulating phase , 2004, cond-mat/0402133.

[11]  K. Held,et al.  Prominent quasiparticle peak in the photoemission spectrum of the metallic phase of V2O3. , 2002, Physical review letters.

[12]  M. Kiskinova,et al.  Ni/Si(111) system: Formation and evolution of two- and three-dimensional phases studied by spectromicroscopy , 1999 .

[13]  Masatoshi Imada,et al.  Metal-insulator transitions , 1998 .

[14]  D. Sarma,et al.  Evolution of Spectral Function in a Doped Mott Insulator: Surface vs Bulk Contributions , 1998, cond-mat/9803138.

[15]  M. Kiskinova,et al.  Au on Ag/Si(111)-(3×3)R30°: A spectromicroscopy study of a bimetal-silicon interface , 1997 .

[16]  M. Kiskinova,et al.  ESCA MICROSCOPY AT ELETTRA: WHAT IT IS LIKE TO PERFORM SPECTROMICROSCOPY EXPERIMENTS ON A THIRD GENERATION SYNCHROTRON RADIATION SOURCE , 1997 .

[17]  S. Baroni,et al.  Microscopic Manipulation of Homojunction Band Lineups , 1992 .

[18]  W. Brinkman,et al.  Effects of Impurities on the Metal-Insulator Transition , 1972 .

[19]  J. P. Remeika,et al.  Mott Transition in Cr-DopedV2O3 , 1969 .