Characterization of self-assembled InAs quantum dots with InAlAs∕InGaAs strain-reduced layers by photoluminescence spectroscopy

The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14Al0.86As and In0.14Ga0.86As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs.

[1]  M. S. Skolnick,et al.  Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity , 2003 .

[2]  Jin Hong Lee,et al.  Structural and optical properties of shape-engineered InAs quantum dots , 2003 .

[3]  A. Madhukar,et al.  Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer , 2002 .

[4]  Z. G. Wang,et al.  Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer , 2002 .

[5]  Nikolai N. Ledentsov,et al.  Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser , 2001 .

[6]  D. Deppe,et al.  Temperature dependence of gain saturation in multilevel quantum dot lasers , 2000, IEEE Journal of Quantum Electronics.

[7]  Alexey E. Zhukov,et al.  GaAs-based long-wavelength lasers , 2000 .

[8]  O. Shchekin,et al.  Discrete energy level separation and the threshold temperature dependence of quantum dot lasers , 2000 .

[9]  A. Stintz,et al.  Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser , 2000, IEEE Photonics Technology Letters.

[10]  Diana L. Huffaker,et al.  Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser , 1999 .

[11]  S. Mikhrin,et al.  Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate , 1999, IEEE Photonics Technology Letters.

[12]  Mohamed Henini,et al.  Carrier thermal escape and retrapping in self-assembled quantum dots , 1999 .

[13]  Nikolai N. Ledentsov,et al.  1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition , 1999 .

[14]  K. Nishi,et al.  A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates , 1999 .

[15]  Mohamed Henini,et al.  TEMPERATURE DEPENDENCE OF THE OPTICAL PROPERTIES OF INAS/ALYGA1-YAS SELF-ORGANIZED QUANTUM DOTS , 1999 .

[16]  G. Abstreiter,et al.  Electrical detection of optically induced charge storage in self-assembled InAs quantum dots , 1998 .

[17]  Shigeo Sugou,et al.  Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission , 1998 .

[18]  J. Tersoff,et al.  Coarsening of Self-Assembled Ge Quantum Dots on Si(001) , 1998 .

[19]  D. Bimberg,et al.  InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure. , 1995, Physical review. B, Condensed matter.

[20]  David J. Dunstan,et al.  Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells , 1990 .

[21]  Z. G. Wang,et al.  Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots , 2002 .