论文信息 - Precise Depth Control and Low-Damage Atomic-Layer Etching of HfO2 using BCl3 and Ar Neutral Beam

Precise Depth Control and Low-Damage Atomic-Layer Etching of HfO2 using BCl3 and Ar Neutral Beam

The etch characteristics of HfO 2 by atomic-layer etching (ALET) were investigated using a BCl 3 /Ar neutral beam. The effect of ALET on surface modification and etch-depth control was also examined. Self-limited etching of HfO 2 could be obtained using BCl 3 ALET. This was attributed to the absorption of BCl 3 by the Langmuir isotherm during the absorption stage and the vaporization of hafnium-chlorides/boron oxychlorides formed on the surface during the desorption stage. In addition, the surface composition of HfO 2 was not altered by etching during ALET.

[1] Han-Young Lee,et al. Selective plasma etching of ZrOx to Si using inductively coupled BCl3∕C4F8 plasmas , 2006 .

[2] Jane P. Chang,et al. Ion-enhanced chemical etching of HfO2 for integration in metal–oxide–semiconductor field effect transistors , 2003 .

[3] Jane P. Chang,et al. Plasma etching selectivity of ZrO2 to Si in BCl3/Cl2 plasmas , 2003 .

[4] Jane P. Chang,et al. Dielectric property and thermal stability of HfO2 on silicon , 2002 .

[5] G. Yeom,et al. Development of a low angle forward reflected neutral oxygen beam for materials processing , 2001 .

[6] S. Tomohisa,et al. Transport mechanisms of ions and neutrals in low-pressure, high-density plasma etching of high aspect ratio contact holes , 2000 .

[7] D. J. Economou,et al. Realization of atomic layer etching of silicon , 1996 .

[8] S. Namba,et al. Atomic layer manipulation of III–V compounds , 1993 .

[9] S. Namba,et al. Molecular layer etching of GaAs , 1992 .

[10] Jane P. Chang,et al. Plasma etching of high dielectric constant materials on silicon in halogen chemistries , 2004 .

[11] Masami Hane,et al. Notching as an example of charging in uniform high density plasmas , 1996 .

[12] R. C. Weast. CRC Handbook of Chemistry and Physics , 1973 .