论文信息 - Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated- Mobility Fluctuation - 字舞流文

Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors Due to Carrier-Number and Correlated- Mobility Fluctuation

H. Klauk | B. Iñíguez | A. Kloes | G. Darbandy | James W. Borchert | Jakob Pruefer | Jakob Leise | Aristeidis Nikolaou | Michael Geiger | J. W. Borchert