Design Considerations for Designing with Cree SiC Modules Part 2 . Techniques for Minimizing Parasitic Inductance
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Cree SiC MOSFET modules provide a unique combination of high voltage, high current and high switching speed. This combination requires careful consideration of circuit parasitic elements, beyond what is customary when using conventional Si IGBT modules. The effects of circuit parasitics were previously discussed in “Minimizing Parasitic Effects in SiC MOSFET Modules,” and this application note will provide guidance on minimizing these parasitic elements.