论文信息 - Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation

Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation

The effects of proton irradiation on the electrical and infrared switching properties of vanadium oxides were studied. Bombardments are carried out to fluences typical of long-term space missions. Proton bombardment significantly alters semiconductor phase resistivity, infrared transmissivity, transition temperature and hysteresis width. It is concluded that amorphization, hydrogen doping, and strain-related effects are not operative in the changes observed. Vanadium and oxygen vacancies and/or interstitials remain the likely cause for these changes. Implications of these results on proposed damage models are discussed. >

A. Leone | F. Junga | A. Trione

[1] P. Nordlander,et al. Summary Abstract: The barrier to oxygen penetration on transition‐metal oxide surfaces , 1988 .

[2] P. A. Cox,et al. A model for electronic structure of VO2 , 1985 .

[3] F. Case,et al. Modifications in the phase transition properties of predeposited VO2 films , 1984 .

[4] F. Adar,et al. Measurement of local stress in laser‐recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scattering , 1983 .

[5] K. Ufert. Doping of VO2 thin films by ion implantation , 1977 .

[6] John B. Goodenough,et al. The two components of the crystallographic transition in VO2 , 1971 .

[7] C. N. Berglund,et al. Optical Properties of V O 2 between 0.25 and 5 eV , 1968 .

[8] F. J. Morin,et al. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .

[9] F. Case. Simple resistance model fit to the oxidation of a vanadium film into VO2 , 1988 .

[10] D. Adler. Insulating and Metallic States in Transition Metal Oxides , 1968 .