Effect of temperature on fracture toughness in a single-crystal-silicon film and transition in its fracture mode

A change in the fracture mode of a micrometer-sized single-crystal-silicon (SCS) film was observed at a temperature slightly higher than room temperature (RT). Silicon films with a notch on one side were tested under tensile stress at temperatures ranging from RT to 500 °C. The mean fracture toughness was 1.28 MPa at RT and the value remained similar up to 60 °C. However, it drastically increased to nearly twice this value above 70 °C. Differences in the fracture mode and dislocation activity were found by scanning and transmission electron microscopy (SEM and TEM). These results show that the fracture mode changed even at a low temperature near 70 °C due to the activation of dislocations at the notch tip.

[1]  M. Umeno,et al.  Crack healing and fracture strength of silicon crystals , 1986 .

[2]  K. Hsia,et al.  Simulation of the brittle-ductile transition in silicon single crystals using dislocation mechanics , 1997 .

[3]  M. Shikida,et al.  Fracture toughness measurement of thin-film silicon , 2005 .

[4]  F. Ebrahimi,et al.  Fracture anisotropy in silicon single crystal , 1999 .

[5]  A. Argon,et al.  Selection of crack-tip slip systems in the thermal arrest of cleavage cracks in dislocation-free silicon single crystals , 2001 .

[6]  High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals , 2005 .

[7]  W. Sharpe,et al.  Techniques for measuring thermal expansion and creep of polysilicon , 2004 .

[8]  C. Kim,et al.  Microscale material testing of single crystalline silicon: process effects on surface morphology and tensile strength , 2000 .

[9]  J. Schweitz,et al.  Micromechanical fracture strength of silicon , 1990 .

[10]  Mitsuhiro Shikida,et al.  Measurement for fracture toughness of single crystal silicon film with tensile test , 2005 .

[11]  S. Weissmann,et al.  Importance of microplasticity in the fracture of silicon , 1974, Metallurgical and Materials Transactions B.

[12]  M. Brede The brittle-to-ductile transition in silicon , 1993 .

[13]  William F. Brown,et al.  Stress-Intensity Factors for a Single-Edge-Notch Tension Specimen by Boundary Collocation of a Stress Function , 1964 .

[14]  Yoshitada Isono,et al.  Plastic deformation of nanometric single crystal silicon wire in AFM bending test at intermediate temperatures , 2002 .

[15]  J. J. Mecholsky,et al.  Fractal fracture of single crystal silicon , 1991 .

[16]  O. Tabata,et al.  Specimen size effect on tensile strength of surface-micromachined polycrystalline silicon thin films , 1998 .

[17]  Gérard Michot,et al.  Dislocation loops at crack tips: nucleation and growth— an experimental study in silicon , 1993 .

[18]  C. John The brittle-to-ductile transition in pre-cleaved silicon single crystals , 1975 .

[19]  Mitsuhiro Shikida,et al.  Mechanical properties of a micron-sized SCS film in a high-temperature environment , 2006 .

[20]  M. Shikida,et al.  Tensile testing of silicon film having different crystallographic orientations carried out on a silicon chip , 1998 .

[21]  Mitsuhiro Shikida,et al.  Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition , 2005 .

[22]  Naoko I Kato,et al.  Reducing focused ion beam damage to transmission electron microscopy samples. , 2004, Journal of electron microscopy.

[23]  S. Roberts,et al.  The Brittle-to-Ductile Transition in Silicon* , 1988 .