X-ray characterization of bulk AIN single crystals grown by the sublimation technique

Abstract Bulk AlN single crystal boules have been grown using the sublimation technique and several substrates have been prepared from them. Microstructural characterization of these substrates has been performed using synchrotron white beam X-ray topography (SWBXT) and high-resolution triple axis X-ray diffraction. Our study has revealed that AlN single crystal boules grown by the sublimation technique can possess a high structural quality with dislocation densities of 800–1000/cm 2 and rocking curves with a full-width at half-maximum of less than 10 arcsec. The distribution of dislocations is inhomogeneous with large areas of the wafer free from dislocations. Inclusions are also observed (density of the order of 10 5 /cm 3 ) and their distribution is also inhomogeneous.

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