Optical orientation and femtosecond relaxation of spin-polarized holes in GaAs.

Optical orientation of spin-polarized heavy and light holes followed by relaxation to other valence subband states has been observed unambiguously in undoped bulk GaAs in spite of the extremely short spin relaxation time. The measured relaxation time for the heavy holes is 110 fs +/-10%. The results are relevant for applications such as interpretation of spin-polarized transport in semiconductors as well as the assessment of feasibility of hole-based spin-transport devices which relies on precise knowledge of the hole-spin relaxation time.

[1]  Spin relaxation in semiconductor quantum wells , 1993 .

[2]  Hideki Gotoh,et al.  Photon-spin controlled lasing oscillation in surface-emitting lasers , 1998 .

[3]  R. J. Elliott,et al.  Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors , 1954 .

[4]  D. Hilton,et al.  Femtosecond optical-pulse-induced absorption and refractive-index changes in GaAs in the midinfrared , 1999 .

[5]  Effect of electron-hole interaction on electron spin relaxation in GaAs-AlGaAs quantum wells , 2000, Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464).

[6]  C. Tang,et al.  Femtosecond Two-Photon Induced Luminescence Spectroscopic Study of Carrier Thermalization and the Lifetime of Split-Off Holes in GaAs , 2000 .

[7]  Jaroslav Fabian,et al.  Spin relaxation of conduction electrons , 1999, cond-mat/9901170.

[8]  Stuart A. Wolf,et al.  Spintronics : A Spin-Based Electronics Vision for the Future , 2009 .

[9]  M M Fejer,et al.  Broadly tunable mid-infrared femtosecond optical parametric oscillator using all-solid-state-pumped periodically poled lithium niobate. , 1997, Optics letters.

[10]  Hole polarization and slow hole-spin relaxation in an n-doped quantum-well structure. , 1992, Physical review. B, Condensed matter.

[11]  Shah,et al.  Subpicosecond spin relaxation dynamics of excitons and free carriers in GaAs quantum wells. , 1991, Physical review letters.

[12]  Hole relaxation and luminescence polarization in doped and undoped quantum wells. , 1990, Physical review letters.

[13]  Kent C. Burr,et al.  Femtosecond midinfrared-induced luminescence study of the ultrafast dynamics of split-off holes in GaAs , 1999 .

[14]  Femtosecond spectroscopy of carrier-spin relaxation in GaAs-AlxGa1-xAs quantum wells. , 1991, Physical review. B, Condensed matter.

[15]  Martin M. Fejer,et al.  High-repetition-rate femtosecond optical parametric oscillator based on periodically poled lithium niobate , 1997 .

[16]  B. P. Zakharchenya,et al.  REVIEWS OF TOPICAL PROBLEMS: Spectrum and polarization of hot-electron photoluminescence in semiconductors , 1982 .