Resistive switching in nonplanar HfO2-based structures with variable series resistance

The authors have prepared μm-sized HfO2-based nonplanar resistive switching cells with TiN and Pt electrodes. The structures exhibited stable resistive switching loops with low resistance state current below 1 mA. The influence of series resistance of the TiN strip electrode on the switching characteristics was measured and simulated. It was shown that the series resistance reduces the low state resistance current as well as high to low resistance state ratio.

[1]  Edmund Dobročka,et al.  Resistive switching in HfO2-based atomic layer deposition grown metal–insulator–metal structures , 2014 .

[2]  Jordi Suñé,et al.  Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM , 2013, Scientific Reports.

[3]  Shibing Long,et al.  A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown , 2013, IEEE Electron Device Letters.

[4]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[5]  H. Ahn,et al.  Realization of vertical resistive memory (VRRAM) using cost effective 3D process , 2011, 2011 International Electron Devices Meeting.

[6]  B. Tillack,et al.  Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells , 2011 .

[7]  Frederick T. Chen,et al.  Experimental investigation of the reliability issue of RRAM based on high resistance state conduction , 2011, Nanotechnology.

[8]  L. Goux,et al.  Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells , 2010 .

[9]  Hisashi Shima,et al.  Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.

[10]  P. Zhou,et al.  In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching , 2010, IEEE Electron Device Letters.

[11]  Frederick T. Chen,et al.  Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation , 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

[12]  L. Goux,et al.  Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM , 2013, IEEE Transactions on Electron Devices.

[13]  Frederick T. Chen,et al.  Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap , 2010, IEEE Electron Device Letters.