Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment
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Z. Qin | X. Kang | X. L. Yang | F. J. Xu | W. Ge | B. Shen | X. Q. Wang | J. Lang | B. Liu | N. Zhang | X. Fang | J. M. Wang | L. Wang | N. Zhang