Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon
暂无分享,去创建一个
[1] Y. J. V. D. Meulen,et al. Effects of HCl and Cl2 additions on silicon oxidation kinetics , 1974 .
[2] M. Conti,et al. Oxidation stacking faults in epitaxial silicon crystals , 1975 .
[3] B. E. Deal,et al. Thermal Oxidation of Heavily Doped Silicon , 1965 .
[4] P. Dobson,et al. The effect of oxidation on anomalous diffusion in silicon , 1971 .
[5] J. C. Phillips,et al. Macroscopic Model of Formation of Vacancies in Semiconductors , 1973 .
[6] W. J. Tunstall,et al. Diffraction contrast analysis of two-dimensional defects present in silicon after annealing , 1966 .
[7] J. V. Vechten. Formation of interstitial-type dislocation loops in tetrahedral semiconductors by precipitation of vacancies , 1978 .
[8] Richard B. Fair,et al. Diffusion of ion-implanted B in high concentration P- and As-doped silicon , 1975 .
[9] Kunio Nakamura,et al. Implanted As Redistribution during Annealing in Oxidizing Ambient , 1978 .
[10] N. D. Thái. Anomalous diffusion in semiconductors—a quantitative analysis , 1970 .
[11] S. M. Hu,et al. Defects in silicon substrates , 1977 .
[12] T. Distefano. Field dependent internal photoemission probe of the electronic structure of the Si–SiO2 interface , 1976 .
[13] W. G. Spitzer,et al. The mechanisms for silicon oxidation in steam and oxygen , 1960 .
[14] J. Wortman,et al. Effect of Mechanical Stress on p‐n Junction Device Characteristics , 1964 .
[15] G. D. Watkins. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair , 1967 .
[16] P. Dobson,et al. The effect of oxidation on the diffusion of phosphorus in silicon , 1979 .
[17] A. Willoughby,et al. A New Observation of Enhanced Diffusion , 1972 .
[18] U. Gösele,et al. Interstitial supersaturation near phosphorus‐diffused emitter zones in silicon , 1979 .
[19] Masayuki Yoshida. Excess vacancy generation by E‐center dissociation in the case of phosphorus diffusion in silicon , 1977 .
[20] L. Katz,et al. Boron Segregation at Si ‐ SiO2 Interface as a Function of Temperature and Orientation , 1976 .
[21] R. Fair. Quantified Conditions for Emitter‐Misfit Dislocation Formation in Silicon , 1978 .
[22] L. Kalinowski,et al. Self‐diffusion in intrinsic silicon , 1979 .
[23] M. Tamura,et al. Effect of Crystal Orientation on the Stacking Fault Formation in Thermally Oxidized Silicon , 1971 .
[24] A. Revesz. The Role of Hydrogen in SiO2 Films on Silicon , 1979 .
[25] R. Ghoshtagore. Low concentration diffusion in silicon under sealed tube conditions , 1972 .
[26] S. Murarka. Oxygen pressure dependence of the retrogrowth of oxidation‐induced stacking faults in (100) silicon , 1978 .
[27] J. V. Vechten,et al. Divacancy binding enthalpy in semiconductors , 1975 .
[28] James D. Meindl,et al. Thermal Oxidation of Heavily Phosphorus‐Doped Silicon , 1978 .
[29] M. Lagally,et al. Auger investigation of boron‐doped SiO2/Si , 1977 .
[30] G. D. Watkins,et al. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center , 1964 .
[31] N. D. Thái. Concentration‐Dependent Diffusion of Boron and Phosphorus in Silicon , 1970 .
[32] R. Swalin. Theoretical calculations of the enthalpies and entropies of diffusion and vacancy formation in semiconductors , 1961 .
[33] P. Dobson,et al. Oxidation, defects and vacancy diffusion in silicon , 1969 .
[34] J. Fairfield,et al. Arsenic Isoconcentration Diffusion Studies in Silicon , 1969 .
[35] H. Shiraki. Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation , 1976 .
[36] J. V. Vechten. Effect of reconstruction during epitaxial growth , 1977 .
[37] A. Willoughby. Interactions between sequential dopant diffusions in silicon-a review , 1977 .
[38] C. D. Thurmond,et al. Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and Ge , 1976 .
[39] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors , 1967 .
[40] U. Gösele,et al. The formation of swirl defects in silicon by agglomeration of self-interstitials , 1977 .
[41] C. R. Helms. Morphology and electronic structure of Si–SiO2 interfaces and Si surfaces , 1979 .
[42] D. W. Hess,et al. Kinetics of the Thermal Oxidation of Silicon in O 2 / HCl Mixtures , 1977 .
[43] Teruo Kato,et al. Influence of Doping Impurities on Stacking Fault Generation in Thermally Oxidized Silicon , 1972 .
[44] R. Ghez,et al. Silicon Oxidation Studies: The Role of H 2 O , 1977 .
[45] H. Shiraki. Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O2 Oxidation , 1976 .
[46] C. Hsieh,et al. Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidation , 1973 .
[47] E. Irene,et al. Silicon Oxidation Studies: The Oxidation of Heavily B‐ and P‐Doped Single Crystal Silicon , 1978 .
[48] J. Chikawa,et al. Melting of silicon crystals and a possible origin of swirl defects , 1977 .
[49] Richard B. Fair,et al. Boron Diffusion in Silicon‐Concentration and Orientation Dependence, Background Effects, and Profile Estimation , 1975 .
[50] J. W. Matthews,et al. A comment on the ``characterization of swirl defects in floating zone Si crystals'' by P.M. Petroff and A.J.R. De Kock , 1976 .
[51] L. Elstner,et al. Quenched‐in Levels in p‐Type Silicon , 1967 .
[52] James D. Plummer,et al. Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels I . Theory , 1979 .
[53] Y. Nakajima,et al. Simplified Expression for the Distribution of Diffused Impurity , 1971 .
[54] G. Masetti,et al. On phosphorus diffusion in silicon under oxidizing atmospheres , 1973 .
[55] A. S. Grove,et al. General Relationship for the Thermal Oxidation of Silicon , 1965 .
[56] R. Fair,et al. Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O 2 Oxidation , 1978 .
[57] James D. Plummer,et al. Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels II . Comparison with Experiment and Discussion , 1979 .
[58] M. Shatzkes,et al. Distribution of dopant in SiO2‐Si , 1976 .
[59] Effects of High Phosphorus Concentration on Diffusion into Silicon , 1968 .
[60] M. Joshi,et al. Diffusion‐Induced Imperfections in Silicon , 1965 .
[61] K. Bennemann. New Method for Treating Lattice Point Defects in Covalent Crystals , 1965 .
[62] Shyam P. Murarka,et al. Oxidation induced stacking faults in n‐ and p‐type (100) silicon , 1977 .
[63] A. Kurtz,et al. Diffusion of Boron into Silicon , 1960 .
[64] S. M. Hu,et al. Formation of stacking faults and enhanced diffusion in the oxidation of silicon , 1974 .
[65] R. Swalin. Model for Solute Diffusion in Crystals with the Diamond Structure , 1958 .
[66] A. Brailsford. Interaction Between Localized Defects in an Isotropic Elastic Medium , 1969 .
[67] K. Hirabayashi,et al. Kinetics of Thermal Growth of HCl ‐ 02 Oxides on Silicon , 1973 .
[68] S. P. Murarka,et al. Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients , 1975 .
[69] R. Fair,et al. The Diffusion of Ion‐Implanted Arsenic in Silicon , 1975 .
[70] S. Prussin. Role of sequential annealing, oxidation, and diffusion upon defect generation in ion‐implanted silicon surfaces , 1974 .
[71] T. Nakayama,et al. Kinetics of Thermal Growth of Silicon Dioxide Films in Water Vapor‐Oxygen‐Argon Mixtures , 1966 .
[72] F. Cappellani,et al. Annealing behaviour of arsenic implants in silicon , 1973 .
[73] D. Brown,et al. Glass Source Diffusion in Si and SiO2 , 1971 .
[74] G. D. Watkins,et al. Carbon Interstitial in the Diamond Lattice , 1973 .
[75] L. Kimerling. New Developments in Defect Studies in Semiconductors , 1976, IEEE Transactions on Nuclear Science.
[76] L. Wiggers,et al. Backscattering measurements of the temperature dependence of irradiation-induced displacement of as and sb atoms in Si crystals , 1978 .
[77] Bruce E. Deal,et al. Thermal Oxidation Kinetics of Silicon in Pyrogenic H 2 O and 5% HCl / H 2 O Mixtures , 1978 .
[78] Sigurd Wagner,et al. Diffusion of Boron from Shallow Ion Implants in Silicon , 1972 .
[79] C. D. Thurmond. The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP , 1975 .
[80] W. V. Gelder,et al. Stacking faults in (100) epitaxial silicon caused by HF and thermal oxidation and effects on p‐n junctions , 1972 .
[81] D. Hess,et al. Control of fixed charge at Si–SiO2 interface by oxidation‐reduction treatments , 1973 .
[82] S. M. Hu,et al. Interactions in Sequential Diffusion Processes in Semiconductors , 1968 .
[83] K. H. Nicholas. Studies of anomalous diffusion of impurities in silicon , 1966 .
[84] D. Lecrosnier,et al. Influence of phosphorus‐induced point defects on a gold‐gettering mechanism in silicon , 1980 .
[85] J. S. Sandhu,et al. Arsenic source vapor pressure kinetics and capsule diffusion , 1971 .
[86] S. Hu. Anomalous temperature effect of oxidation stacking faults in silicon , 1975 .
[87] K. V. Anand,et al. Orientation dependence of the diffusion of boron in silicon , 1971 .
[88] M. Okamura. Boron Diffusion into Silicon Using Elemental Boron , 1969 .
[89] B. R. Singh,et al. Oxidation of Silicon in the Presence of Chlorine and Chlorine Compounds , 1978 .
[90] H. Shiraki. Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O2 Oxidation , 1975 .
[91] J. Borrego,et al. The Theory of Anomalous Diffusion in Solids Near Diffusant Saturation Concentrations: Example‐Phosphorus in Silicon , 1970 .
[92] M. Gauneau,et al. Long‐range enhancement of boron diffusivity induced by a high‐surface‐concentration phosphorus diffusion , 1979 .
[93] Robert W. Dutton,et al. Boron in Near‐Intrinsic and Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation , 1978 .
[94] H. Tsukamoto,et al. Restrained Diffusion of Boron and Phosphorus in Silicon under HCl ‐ Added Oxygen Atmosphere , 1976 .
[95] Charles S. Smith. Piezoresistance Effect in Germanium and Silicon , 1954 .
[96] G. N. Wills. The orientation dependent diffusion of boron in silicon under oxidizing conditions , 1969 .
[97] R. Ghoshtagore. Dopant Diffusion in Silicon. III. Acceptors , 1971 .
[98] M. Joshi,et al. Silicon defect structure induced by arsenic diffusion and subsequent steam oxidation , 1970 .
[99] S. Murarka. Oxygen partial‐pressure dependence of the oxidation‐induced surface stacking faults in (100) n silicon , 1977 .
[100] H. Nakamura,et al. Interface reactions of B$sub 2$O$sub 3$--Si system and boron diffusion into silicon , 1973 .
[101] Masayuki Yoshida. Numerical Solution of Phosphorus Diffusion Equation in Silicon , 1979 .
[102] R. Ghoshtagore. Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon Compounds , 1966 .
[103] S. Hu. Diffusion in Heavily Doped Semiconductors: Local Charge Neutrality and One‐Band Approximations , 1972 .
[104] S. Prussin,et al. Generation and Distribution of Dislocations by Solute Diffusion , 1961 .
[105] R. Fair,et al. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect , 1977 .
[106] L. Young,et al. Thermal Oxidation of Silicon In Situ Measurement of the Growth Rate Using Ellipsometry , 1975 .
[107] H. Saito,et al. The Interactions of Point Defects with Impurities in Silicon , 1969 .
[108] R. Gereth,et al. Localized Enhanced Diffusion in NPN Silicon Structures , 1965 .
[109] Richard B. Fair,et al. Profile Parameters of Implanted‐Diffused Arsenic Layers in Silicon , 1976 .
[110] R. Ghoshtagore. Donor Diffusion Dynamics in Silicon , 1971 .
[111] S. Hu. On Interaction Potential, Correlation Factor, Vacancy Mobility, and Activation Energy of Impurity Diffusion in Diamond Lattice , 1973 .
[112] D. P. Kennedy,et al. Concentration dependent diffusion of arsenic in silicon , 1971 .
[113] Paul J. Jorgensen,et al. Effect of an Electric Field on Silicon Oxidation , 1962 .
[114] C. R. Helms,et al. MP-B1 auger sputter profiling studies of phosphorus pileup at the Si-SiO2interface , 1979, IEEE Transactions on Electron Devices.
[115] D. L. Kendall,et al. On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon , 1972 .
[116] E. L. Williams. Diffusion of Oxygen in Fused Silica , 1965 .
[117] J. Murota,et al. Relationship between total arsenic and electrically active arsenic concentrations in silicon produced by the diffusion process , 1979 .
[118] J. F. Ziegler,et al. Properties of SiO2 Grown in the Presence of HCl or Cl2 , 1975 .
[119] R. Fair. Profile Estimation of High-Concentration Arsenic Diffusions in Silicon , 1972 .
[120] C. R. Helms,et al. High resolution Auger sputter profiling study of the effect of phosphorus pileup on the Si–SiO2 interface morphology , 1978 .
[121] H. Queisser,et al. Growth of Lattice Defects in Silicon during Oxidation , 1964 .
[122] Guido Masetti,et al. Temperature dependence of boron diffusion in (111), (110) and (100) silicon , 1976 .
[123] F. Frank,et al. Mechanism of Diffusion of Copper in Germanium , 1956 .
[124] D. Shaw,et al. Self‐ and impurity diffusion in Ge and Si , 1975 .
[125] J. Fairfield,et al. Self‐Diffusion in Intrinsic and Extrinsic Silicon , 1967 .
[126] P. Dobson,et al. The mechanism of impurity diffusion in silicon , 1972 .
[127] J. Makris,et al. Phosphorus Isoconcentration Diffusion Studies in Silicon , 1973 .
[128] C.P. Wu,et al. Redistribution of ion-implanted impurities in silicon during diffusion in oxidizing ambients , 1976, IEEE Transactions on Electron Devices.
[129] C. D. Thurmond,et al. Entropy of ionization and temperature variation of ionization levels of defects in semiconductors , 1976 .
[130] T. Hattori. Elimination of Stacking Faults in Silicon by Trichloroethylene Oxidation , 1976 .
[131] G. L. Vick,et al. Solid Solubility and Diffusion Coefficients of Boron in Silicon , 1969 .
[132] A. Fukuhara,et al. Determination of strain distributions from X‐ray Bragg reflexion by silicon single crystals , 1977 .
[133] C. Claeys,et al. Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faults , 1978 .
[134] H. Ishikawa,et al. Annihilation of Stacking Faults in Silicon by Impurity Diffusion , 1976 .
[135] T. C. Chan,et al. Diffusion of boron, phosphorus, arsenic, and antimony into , 1970 .
[136] Robert W. Dutton,et al. Oxidation‐enhanced diffusion of arsenic and phosphorus in near‐intrinsic 〈100〉 silicon , 1978 .
[137] F. Seitz. ON THE THEORY OF DIFFUSION IN METALS , 1950 .
[138] Jacques I. Pankove,et al. Hydrogenation and dehydrogenation of amorphous and crystalline silicon , 1978 .
[139] D. J. Thomas,et al. Surface Damage and Copper Precipitation in Silicon , 1963 .
[140] R. Fair. The effect of strain‐induced band‐gap narrowing on high concentration phosphorus diffusion in silicon , 1979 .
[141] R. Dutton,et al. Models for computer simulation of complete IC fabrication process , 1979 .
[142] A. Seeger,et al. DIFFUSION MECHANISMS AND POINT DEFECTS IN SILICON AND GERMANIUM. , 1968 .
[143] K. G. McQuhae,et al. The lattice contraction coefficient of boron and phosphorus in silicon , 1972 .
[144] J. Hardy,et al. Point defect interactions in harmonic cubic lattices , 1967 .
[145] J. E. Lawrence. The Cooperative Diffusion Effect , 1966 .
[146] Richard B. Fair,et al. Effect of complex formation on diffusion of arsenic in silicon , 1973 .