Ionized Mg doping in molecular‐beam epitaxy of GaAs

Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular‐beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg‐ion bombardment is negligible when the ion accelerating voltage (Va) ≲130 V. For higher Va , the damage can be removed by postgrowth annealing.

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