论文信息 - Geiger-mode operation of back-illuminated GaN avalanche photodiodes

Geiger-mode operation of back-illuminated GaN avalanche photodiodes

The authors report the Geiger-mode operation of back-illuminated GaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back illumination in order to enhance hole-initiated multiplication. The spectral response in Geiger-mode operation was analyzed under low photon fluxes. Single photon detection capabilities were demonstrated in devices with areas ranging from 225to14063μm2. Single photon detection efficiency of 20% and dark count rate <10kHz were achieved in the smallest devices.

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