Optical and electrical doping of silicon with holmium
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[1] Salvatore Coffa,et al. Excitation and nonradiative deexcitation processes of Er 3 + in crystalline Si , 1998 .
[2] A. Polman,et al. Erbium implanted thin film photonic materials , 1997 .
[3] A. Polman,et al. Segregation and trapping of erbium at a moving crystal-amorphous Si interface , 1997 .
[4] Sebania Libertino,et al. The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon , 1995 .
[5] J. Poate,et al. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode , 1994 .
[6] Alberto Carnera,et al. Room‐temperature electroluminescence from Er‐doped crystalline Si , 1994 .
[7] F. Priolo,et al. Electrical and optical characterization of Er‐implanted Si: The role of impurities and defects , 1993 .
[8] Jurgen Michel,et al. Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon , 1991 .