Silicon Surface Morphology after Annealing in Ambient Hydrogen Containing a Trace Amount of Hydrogen Halide Gas

The semiconductor silicon substrate surface morphology was studied after annealing in ambient hydrogen containing a trace amount (ppm level) of hydrogen chloride gas and hydrogen fluoride gas at atmospheric pressure. The silicon substrate surface became significantly rough after the annealing at substrate temperatures higher than 1100 °C. The surface had many randomly-shaped deep pits without any crystalline orientation. In contrast, the silicon surface was still specular after annealing at 1000 °C with the root mean square roughness of ca. 0.2 nm. Hydrogen chloride gas and hydrogen fluoride gas at very low concentrations are considered to be inactive toward the silicon surface at temperatures lower than 1000 °C.

[1]  T. Ohmi,et al.  Impact of light on the surface nanostructure of silicon , 2006 .

[2]  K. Ryoo.  Metal Oxide Particle Removal Using Electrolyzed Anode Water , 2005 .

[3]  M. Aihara,et al.  Dominant rate process of silicon surface etching by hydrogen chloride gas , 2005 .

[4]  Y. Fukai,et al.  Silicon Carbide Etching Using Chlorine Trifluoride Gas , 2005 .

[5]  M. Aihara,et al.  High-Performance Silicon Etching Using Chlorine Trifluoride Gas , 2003 .

[6]  M. Goorsky,et al.  Misfit Dislocation Nucleation Study in p / p + Silicon , 2001 .

[7]  R. E. Oosterbroek,et al.  Selective Wafer Bonding by Surface Roughness Control , 2001 .

[8]  K. Yamabe,et al.  Nonuniform distribution of trapped charges in electron injection stressed SiO2 films , 2001 .

[9]  Yeong-Her Wang,et al.  Effect of Surface Treatments on the Electrical Properties of Fluorinated Silicon Oxides , 2000 .

[10]  D. Hess,et al.  Photoresist Removal Using Low Molecular Weight Alcohols , 2000 .

[11]  Kazutoshi Inoue,et al.  Surface Imperfection Behavior during the SiH4 Epitaxial Growth Process , 2000 .

[12]  Hitoshi Habuka,et al.  Change in Microroughness of a Silicon Surface during In Situ Cleaning Using HF and HCl Gases , 1998 .

[13]  Hitoshi Habuka,et al.  Reaction of hydrogen fluoride gas at high temperatures with silicon oxide film and silicon surface , 1998 .

[14]  M. Heyns,et al.  Impact of Iron Contamination and Roughness Generated in Ammonia Hydrogen Peroxide Mixtures (SC1) on 5 nm Gate Oxides , 1998 .

[15]  L. Cook,et al.  Nonparticulate Origins of Light Point Defects on Polished Silicon Wafers , 1996 .

[16]  H. Horie,et al.  Atomic Force Microscopy Observation of Si(100) Surface after Hydrogen Annealing , 1994 .

[17]  H. Z. Massoud,et al.  Substrate Doping and Microroughness Effects in RTP Temperature Measurement by In Situ Ellipsometry , 1994 .

[18]  T. Ohmi,et al.  Dependence of Surface Microroughness of CZ, FZ, and EPI Wafers on Wet Chemical Processing , 1992 .

[19]  D. Aspnes,et al.  Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide , 1980 .

[20]  T. Ohmi,et al.  Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing , 2009 .

[21]  Howard R. Huff,et al.  Measurement of Silicon Particles by Laser Surface Scanning and Angle‐Resolved Light Scattering , 1997 .