UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays
暂无分享,去创建一个
Thomas Fromherz | Michael Mühlberger | Iris Bergmair | G. Bauer | Friedrich Schäffler | Florian Hackl | T. Fromherz | F. Schäffler | G. Bauer | E. Lausecker | M. Brehm | I. Bergmair | M. Grydlik | F. Hackl | M. Mühlberger | E. Lausecker | Moritz Brehm | Martyna Grydlik
[1] L. Nanver,et al. SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening , 2007 .
[2] F. Pezzoli,et al. Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography , 2009, Nanoscale research letters.
[3] Thomas Fromherz,et al. Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates , 2003 .
[5] C. Dais,et al. Three-dimensional Si/Ge quantum dot crystals. , 2007, Nano letters.
[6] T. Fromherz,et al. Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates , 2011, Nanotechnology.
[7] K. Thonke,et al. Photoluminescence of high‐quality SiGe quantum wells grown by molecular beam epitaxy , 1993 .
[8] Kang L. Wang,et al. Regimented placement of self-assembled Ge dots on selectively grown Si mesas , 2000 .
[9] K. Hingerl,et al. Equalising stamp and substrate deformations in solid parallel-plate UV-based nanoimprint lithography , 2008 .
[10] O. Schmidt,et al. Self-assembled Ge/Si dots for faster field-effect transistors , 2001 .
[11] O. Schmidt. Lateral alignment of epitaxial quantum dots , 2007 .
[12] Ernst-Bernhard Kley,et al. A Moiré method for high accuracy alignment in nanoimprint lithography , 2007 .
[13] T. Fromherz,et al. Inverted Ge islands in {111} faceted Si pits—a novel approach towards SiGe islands with higher aspect ratio , 2010 .
[14] E. Kapon,et al. Mechanisms of Self-Ordering in Nonplanar Epitaxy of Semiconductor Nanostructures , 2002 .
[15] G. Renaud,et al. Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates. , 2009, Physical review letters.
[16] Jan Haisma,et al. Mold‐assisted nanolithography: A process for reliable pattern replication , 1996 .
[17] T. Fromherz,et al. Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset , 2009 .
[18] Eun-Soo Kim,et al. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties , 1998 .
[19] Wei Wu,et al. Sub-20-nm alignment in nanoimprint lithography using Moiré fringe. , 2006, Nano letters.
[20] G Bauer,et al. Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands , 2010, Nanoscale research letters.
[21] F. Schäffler,et al. Self‐assembled Si and SiGe nanostructures: New growth concepts and structural analysis , 2006 .
[22] David J. Lockwood,et al. Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects , 2009, Proceedings of the IEEE.
[23] Weber,et al. Near-band-gap photoluminescence of Si-Ge alloys. , 1989, Physical review. B, Condensed matter.
[24] Wei Wu,et al. Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography , 2004 .
[25] L. Miglio,et al. Fast isotropic adatom diffusion on Ge(105) dot facets , 2004 .
[26] O. Schmidt,et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. , 2008, Nano letters.
[27] S. Chou,et al. Imprint Lithography with 25-Nanometer Resolution , 1996, Science.
[28] Sturm,et al. Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells. , 1991, Physical review letters.
[29] R. Stanley Williams,et al. Lithographic positioning of self-assembled Ge islands on Si(001) , 1997 .