Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure

Based on the equivalent resistance and finite element method, the current distribution in active region is analyzed with current injection from ring electrode. To improve the injection efficiency and reduce the resistance of p-type DBR, we design reverse mesa structure and achieved low threshold current InGaAs vertical cavity surface emitting laser operation. In situ thickness monitoring and controlling in MBE growth is also studied.