Fabrication and electrical characteristics of Ti/Al OHMIC contact to Si+ implanted GaN
暂无分享,去创建一个
Kazuki Nomoto | Mitsunori Kawamura | Nobuyuki Ito | Tohru Nakamura | Masataka Satoh | Tomoyoshi Mishima | Taroh Inada | Akira Suzuki | Mitsunori Kawamura | Takeshi Kasai | Tomoyoshi Mishima | T. Mishima | T. Inada | Tohru Nakamura | K. Nomoto | Tohru Nakamura | M. Kawamura | Masataka Satoh | M. Satoh | Nobuyuki Ito | Akira Suzuki | A. Suzuki | N. Ito | Takeshi Kasai
[1] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .
[2] Gerard J. Sullivan,et al. Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization , 1999 .
[3] H. Morkoç,et al. Low resistance ohmic contacts on wide band‐gap GaN , 1994 .
[4] R. J. Shul,et al. GAN : PROCESSING, DEFECTS, AND DEVICES , 1999 .
[5] James S. Speck,et al. Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing , 2004 .
[6] Hiroshi Harima,et al. TOPICAL REVIEW: Properties of GaN and related compounds studied by means of Raman scattering , 2002 .
[7] Lester F. Eastman,et al. Ultra-low resistive ohmic contacts on n-GaN using Si implantation , 1997 .
[8] James A. Fellows,et al. Electrical activation studies of GaN implanted with Si from low to high dose , 2002 .
[9] M. Shur,et al. Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe , 2001 .
[10] M. Hansen,et al. Constitution of Binary Alloys , 1958 .
[11] Hongen Shen,et al. Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN , 2000 .
[12] H. Morkoç,et al. Very low resistance multilayer Ohmic contact to n‐GaN , 1996 .