Quantum transport with spin dephasing: A nonequlibrium Green's function approach
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[1] L. Sheng,et al. Theory of impurity resonant tunnel magnetoresistance , 2004 .
[2] C. N. R. Rao,et al. Transition metal oxides , 1995 .
[3] B. E. Kane. A silicon-based nuclear spin quantum computer , 1998, Nature.
[4] J. Appelbaum. Exchange Model of Zero-Bias Tunneling Anomalies , 1967 .
[5] Gerald D. Mahan,et al. Quantum transport equation for electric and magnetic fields , 1987 .
[6] P. Freitas,et al. Temperature dependence and annealing effects on spin dependent tunnel junctions , 1999 .
[7] T. Kambara. Theory of high‐spin?low‐spin transitions in transition metal compounds induced by the Jahn–Teller effect , 1979 .
[8] J. T. Ranney,et al. The Surface Science of Metal Oxides , 1995 .
[9] Qingyu Xu,et al. Microstructure investigation of Fe/Al2O3/Fe tunneling junction , 1999 .
[10] J. Anderson,et al. Spin dependent tunneling devices fabricated using photolithography , 1996 .
[11] Ching‐Ray Chang,et al. Influence of interfacial roughness on the tunnel magnetoresistance , 2001 .
[12] MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode , 1999, IEEE International Magnetics Conference.
[13] R. Rosenfeld. Nature , 2009, Otolaryngology--head and neck surgery : official journal of American Academy of Otolaryngology-Head and Neck Surgery.
[14] Vladimir Antropov,et al. First-principles exchange interactions in Fe, Ni, and Co , 1999 .
[15] Rolf Landauer,et al. Conductance from transmission: common sense points , 1992 .
[16] J. P. Remeika,et al. Spin Resonance of Transition Metal Ions in Corundum , 1962 .
[17] J. Mathon. TIGHT-BINDING THEORY OF TUNNELING GIANT MAGNETORESISTANCE , 1997 .
[18] Gerhard Klimeck,et al. Single and multiband modeling of quantum electron transport through layered semiconductor devices , 1997 .
[19] Ching‐Ray Chang,et al. Effect of disorder on the tunnel magnetoresistance: Lattice Green's function method , 2002 .
[20] P. P. Freitas,et al. Dependence of tunneling magnetoresistance on ferromagnetic electrode thickness and on the thickness of a Cu layer inserted at the Al2O3/CoFe interface , 1999 .
[21] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[22] J. Moodera,et al. Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions , 1998 .
[23] J. Zhang,et al. Voltage dependence of magnetoresistance in spin dependent tunneling junctions , 1998 .
[24] S. Datta. Quantum Transport: Atom to Transistor , 2004 .
[25] P. A. Cox. Transition Metal Oxides: An Introduction to Their Electronic Structure and Properties , 1992 .
[26] J. Moodera,et al. Magnetoresistance in doped magnetic tunnel junctions: Effect of spin scattering and impurity-assisted transport , 2000 .
[27] T. Mitsuzuka,et al. Interface structures and magnetoresistance in magnetic tunnel junctions , 1999 .
[28] J. M. Maclaren,et al. Ballistic transport and tunnelling magnetoresistance in tunnel junctions , 2002 .
[29] J. Moodera,et al. Influence of barrier impurities on the magnetoresistance in ferromagnetic tunnel junctions , 1998 .
[30] J. Moodera,et al. Interface Magnetism and Spin Wave Scattering in Ferromagnet-Insulator-Ferromagnet Tunnel Junctions , 1998 .
[31] J. Simmons. Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film , 1963 .
[32] M. Stearns. Simple explanation of tunneling spin-polarization of Fe, Co, Ni and its alloys , 1977 .
[33] Wouter Oepts,et al. Analysis of breakdown in ferromagnetic tunnel junctions , 1999 .
[34] Supriyo Datta,et al. A simple kinetic equation for steady-state quantum transport , 1990 .
[35] Kinder,et al. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.
[36] T. Mitsuzuka,et al. Exchange-biased magnetic tunnel junctions fabricated with in situ natural oxidation , 1999 .