A . 1 Assessment of Distributed-Cycling Schemes on 45 nm NOR Flash Memory Arrays

The assessment of distributed-cycling activation energy for scaled technologies requires a careful control of experimental tests, preventing spurious effects: in particular, we report on the possibility for long gate-stresses to give rise to parasitic drifts, which add to the threshold-voltage loss during post-cycling bake. When the superposition of the two phenomena is taken into account, the effectiveness of distributed-cycling is fully confirmed at the 45nm NOR node.

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