Low voltage operating InGaZnO4 thin film transistors using high-k MgO–Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate
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Dong Hun Kim | N. G. Cho | Il-Doo Kim | Ho-Gi Kim | Hyun-Suk Kim | Jae-Min Hong | Jae-Min Hong | Il‐Doo Kim | Ho-gi Kim