A low-voltage 5.1-5.8-GHz image-reject receiver with wide dynamic range

A monolithic 5-6-GHz band receiver, consisting of a differential preamplifier, dual doubly balanced mixers, cascaded injection-locked frequency doublers, and a quadrature local oscillator generator and prescaler, realizes over 45 dB of image-rejection in a mature 25-GHz silicon bipolar technology. The measured single sideband (50 /spl Omega/) noise figure is 5.1 dB with an IIP3 of -4.5 dBm and 17-dB conversion gain at 5.3 GHz. The 1.9/spl times/1.2 mm/sup 2/ IC is packaged in a standard 32-pin ceramic quad flatpack and consumes less than 50 mW from a 2.2-V supply.

[1]  H. Ainspan,et al.  A 5.2 GHz 3.3 V I/Q SiGe RF transceiver , 1999, Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327).

[2]  J. Long,et al.  A Q-factor enhancement technique for MMIC inductors , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[3]  J.R. Long,et al.  A low-voltage 5.1-5.8-GHz image-reject downconverter RF IC , 2000, IEEE Journal of Solid-State Circuits.

[4]  J. Maligeorgos,et al.  A 2 V 5.1-5.8 GHz image-reject receiver with wide dynamic range , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[5]  J. Sevenhans,et al.  An integrated Si bipolar RF transceiver for a zero IF 900 MHz GSM digital mobile radio frontend of a hand portable phone , 1991, Proceedings of the IEEE 1991 Custom Integrated Circuits Conference.

[6]  T. Drenski,et al.  A 5 GHz-band BiCMOS up/down-converter chip for GMSK modulation wireless systems , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[7]  M. A. Copeland,et al.  A 1.9-GHz silicon receiver with monolithic image filtering , 1998 .

[8]  H.R. Rategh,et al.  A 12.4 mW CMOS front-end for a 5 GHz wireless-LAN receiver , 1999, 1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326).

[9]  J. Long,et al.  The modeling, characterization, and design of monolithic inductors for silicon RF IC's , 1997, IEEE J. Solid State Circuits.

[10]  Sorin P. Voinigescu,et al.  5 GHz SiGe HBT monolithic radio transceiver with tunable filtering , 1999, 1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).

[11]  Sorin P. Voinigescu,et al.  5-GHz SiGe HBT monolithic radio transceiver with tunable filtering , 1999, RFIC 1999.

[12]  J.R. Long,et al.  RF analog and digital circuits in SiGe technology , 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

[13]  J. L. Showell,et al.  A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design , 1997 .

[14]  R. A. Hadaway,et al.  A 5.1-5.8 GHz low-power image-reject downconverter in SiGe technology , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

[15]  Jerry Whitaker.  Analog and Digital Circuits , 2000 .

[16]  J.R. Long,et al.  Monolithic transformers for silicon RF IC design , 2000, IEEE Journal of Solid-State Circuits.

[17]  R. G. Irvine,et al.  An RF front-end for digital mobile radio , 1990, Proceedings on Bipolar Circuits and Technology Meeting.

[18]  R. Adler.  A Study of Locking Phenomena in Oscillators , 1946, Proceedings of the IRE.

[19]  K. Kimura.  A bipolar four-quadrant analog quarter-square multiplier consisting of unbalanced emitter-coupled pairs and expansions of its input ranges , 1994 .