论文信息 - Fowler-Nordheim tunneling in SiO2 films

Fowler-Nordheim tunneling in SiO2 films

Abstract The observation of Fowler-Nordheim tunneling from a magnesium electrode into the conduction band of SiO2 is reported. The observed tunnel currents are independent of temperature and have the theoretical voltage dependence over a range of five decades. The present data together with previously reported values for the Mg-SiO2 barrier energy indicate an average effective mass ratio of 0.47 for electrons in the oxide forbidden band.

E. H. Snow | E. Snow

[1] Carver A. Mead,et al. Barrier energies in metal-silicon dioxide-silicon structures , 1966 .

[2] C. Mead,et al. Experimental Determination ofE−kRelationship in Electron Tunneling , 1966 .

[3] Richard Williams,et al. Photoemission of Electrons from Silicon into Silicon Dioxide , 1965 .

[4] A. S. Grove,et al. General Relationship for the Thermal Oxidation of Silicon , 1965 .

[5] P. V. Gray. Tunneling From Metal to Semiconductors , 1965 .

[6] A. Goodman,et al. Photoemission of Electrons from Metals into Silicon Dioxide , 1966 .