Application of Nanosphere Lithography to LED Surface Texturing and to the Fabrication of Nanorod LED Arrays
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JianJang Huang | Yun-Wei Cheng | Cheng-Yin Wang | Min-Yung Ke | Liang-Yi Chen | Hung-Li Chiang | Jian-jang Huang | Cheng-Yin Wang | Liang-Yi Chen | Cheng-Pin Chen | Yun-Wei Cheng | Min-Yung Ke | Min-Yann Hsieh | Min-Yann Hsieh | Hung-Hsien Chen | Hung-Li Chiang | Hung-Hsien Chen | Cheng-Pin Chen
[1] Yan-Kuin Su,et al. Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface , 2004 .
[2] Marc Lamy de la Chapelle,et al. Silica-assisted catalytic growth of oxide and nitride nanowires , 2001 .
[3] Seong-Ju Park,et al. Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes , 2006, IEEE Photonics Technology Letters.
[4] Hongxing Jiang,et al. Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes , 2004 .
[5] Vapor-Liquid-Solid Mechanisms: Challenges for Nanosized Quantum Cluster/Dot/Wire Materials , 2007 .
[6] Chia-Chun Chen,et al. Large‐Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires , 2000 .
[7] Ru-Chin Tu,et al. Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide Ohmic contacts , 2003 .
[8] Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy , 2006 .
[9] D. Lin,et al. High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure , 2006 .
[10] H. Kuo,et al. Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands , 2007 .
[11] Chii-Chang Chen,et al. Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes , 2007 .
[12] Jian-jang Huang,et al. GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength. , 2008, Optics express.
[13] Jian-jang Huang,et al. Improvement of External Extraction Efficiency in GaN-Based LEDs by $ \hbox{SiO}_{2}$ Nanosphere Lithography , 2008, IEEE Electron Device Letters.
[14] Dong-Sing Wuu,et al. Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography , 2006, IEEE Journal of Selected Topics in Quantum Electronics.
[15] T. Baba,et al. Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal , 2004 .
[16] Wonseok Lee,et al. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes , 2006 .
[17] Chih-Chung Yang,et al. Strain relaxation and quantum confinement in InGaN/GaN nanoposts , 2006 .
[18] Seong-Ju Park,et al. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface , 2003 .
[19] H. Kuo,et al. Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask , 2007 .
[20] Isamu Akasaki,et al. Quantized states in Ga 1 − x In x N / GaN heterostructures and the model of polarized homogeneous quantum wells , 2000 .
[21] Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy , 2005 .
[22] JianJang Huang,et al. InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks , 2008, IEEE Journal of Quantum Electronics.