Lithium based memristive device

The effort of investigating memristor material continues. This paper demonstrates the latest results of such effort by our group. These include memristor device design and measurement based on stacked lithium niobate and aluminum oxide. I-V sweeping results show good switch memristive characteristic. Other preliminary results in this paper include temperature dependency study, pulse voltage write/read and retention characterization. From these results, lithium niobate based device show the temperature stability and multiple stages of write/read and long retention period. All these demonstrate its potential for the application of neuromorphic computing in the future.