论文信息 - Influence of grain size on the transformation temperature of C49 TiSi2 to C54 TiSi2

Influence of grain size on the transformation temperature of C49 TiSi2 to C54 TiSi2

Titanium disilicide exists in two possible crystallographic structures: the C49 (ZrSi2) structure and the C54 structure. At low annealing temperatures (400–650 °C), the C49 TiSi2 phase is formed. It transforms to the C54 phase at annealing temperatures between 650–800 °C. The transformation temperature (Ttr), however, appears to be influenced by the microstructure of the C49 phase. This is concluded from the observed difference in Ttr for TiSi2 thin films with varying average grain sizes.

I. Raaijmakers | Ivo J. M. M. Raaijmakers | H. J. W. van Houtum | T. J. M. Menting | H. V. Houtum

[1] R. Honeycombe,et al. Plastic Deformation of Metals , 1932, Nature.

[2] I. Raaijmakers,et al. First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of Oxygen , 1985 .

[3] R. Beyers,et al. Metastable phase formation in titanium‐silicon thin films , 1985 .

[4] Stephen W. H. Yih,et al. Tungsten: Sources, Metallurgy, Properties, and Applications , 1979 .

[5] G. Rubloff,et al. Material reaction and silicide formation at the refractory metal/silicon interface , 1986 .

[6] J. Christian,et al. The theory of transformations in metals and alloys , 2003 .

[7] A. H. Reader,et al. Nucleation and growth of titanium silicide studied by in situ annealing in a transmission electron microscope , 1987 .