Two-Dimensional Quantum Mechanical Modeling for Multiple-Channel FinFET

In this paper, we report our preliminary study on the 2D quantum-mechanical modeling of multiple-channel FET through solving the coupled Poisson-Schrodinger equations for a multiple-channel FET structure in a self-consistent manner. Our simulation revealed that the drain current driving capability as well as the transconductance for multiple-channel FETs was tremendously improved when compared to FinFETs. The simulation results also revealed that the short-channel effects are more effectively suppressed with comparison to the conventional FinFETs

[1]  U. Chung,et al.  Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

[2]  Y. Yeo,et al.  25 nm CMOS Omega FETs , 2002, Digest. International Electron Devices Meeting,.

[3]  Simulation of quantum effects and nonlocal transport by using the hydrodynamic density-gradient model , 2004 .

[4]  H. T. Kim,et al.  Physical mechanisms on the abnormal gate-leakage currents in pseudomorphic high electron mobility transistors , 2003 .

[5]  Sung Min Kim,et al.  A novel multi-channel field effect transistor (McFET) on bulk Si for high performance sub-80nm application , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[6]  A. T. Galick,et al.  ITERATION SCHEME FOR THE SOLUTION OF THE TWO-DIMENSIONAL SCHRODINGER-POISSON EQUATIONS IN QUANTUM STRUCTURES , 1997 .

[7]  A. Kumar,et al.  QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries , 2002, Digest. International Electron Devices Meeting,.

[8]  G. Masetti,et al.  Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon , 1983, IEEE Transactions on Electron Devices.

[9]  Massimo Vanzi,et al.  A physically based mobility model for numerical simulation of nonplanar devices , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[10]  P. Vogl,et al.  Towards Fully Quantum Mechanical 3D Device Simulations , 2002 .