论文信息 - Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III-V MOS devices - 字舞流文

Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III-V MOS devices

S. Banerjee | G. Bersuker | J. Yum | M. Jhon | K. Min | C. Bielawski | G. Yeom | Y. Jhon | Jae-Ha Kim | T. Hudnall | Se-Koo Kang