Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding

Wavelength conversion by difference‐frequency generation is achieved in a periodically domain reversed AlGaAs waveguide. The AlGaAs waveguide is epitaxially grown on a template substrate where a periodic crystal domain inversion is achieved using wafer bonding, selective etching, and organometallic chemical vapor deposition. Wavelength conversion experiments on a fabricated buried heterowaveguide showed a 90 nm conversion bandwidth, polarization diversified operation, and polarization independent conversion efficiency. The experimental results also showed linearity and spectral inversion, which imply transparency to signal formats including analog and frequency modulation. Simultaneous conversion of multiple input wavelengths with no measurable cross talk is also demonstrated.