Submicron active-passive integration with position and number controlled InAs∕InP (100) quantum dots (1.55μm wavelength region) by selective-area growth

The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100) pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaks are observed from individual and single QDs with wavelength tuned into the 1.55μm telecom region by insertion of ultrathin GaAs interlayers beneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources.

[1]  H. Tan,et al.  Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy , 2007 .

[2]  J. Chyi,et al.  Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane , 2007 .

[3]  S. Anantathanasarn,et al.  Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55μm region by selective-area metal organic vapor-phase epitaxy , 2006 .

[4]  H. Kamada,et al.  Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 µm , 2006, cond-mat/0603845.

[5]  B. Lai,et al.  Strain relaxation and surface migration effects in InGaAlAs and InGaAsP selective-area-grown ridge waveguides , 2006 .

[6]  Dan Dalacu,et al.  Postfabrication fine-tuning of photonic crystal microcavities in InAs∕InP quantum dot membranes , 2005 .

[7]  R Richard Nötzel,et al.  Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy , 2005 .

[8]  Philip J. Poole,et al.  Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots , 2004 .

[9]  Qian Gong,et al.  Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy , 2004 .

[10]  Yasuhiko Arakawa,et al.  Area-controlled growth of InAs quantum dots and improvement of density and size distribution , 2000 .

[11]  T. Fukui,et al.  Formation of single and double self-organized InAs quantum dot by selective area metal-organic vapor phase epitaxy , 2000 .

[12]  E. Veuhoff,et al.  Exploitation of surface selective growth in metalorganic growth technologies for device applications , 1998 .