In-block compensation for decreasing functionality of memories

A method for in-block cancellation of degraded performance within semiconductor memories that may be degraded and having a plurality of memory cells includes the following step: writing to at least some of the plurality of memory cells in a non-uniform manner decreasing performance of some of the plurality of memory cells within the semiconductor memory at the intra-block level. For example, if a behavior of at least some of the plurality of memory cells is not characterized, the method may include characterizing a behavior of at least some of the plurality of memory cells and writing to at least some of the plurality of memory cells based on the characterized behavior and not in one equal