Modeling and investigation of instabilities in heterojunction interband tunnel diodes for microwave applications

The existence of Negative Differential Resistance (NDR) in tunneling diode has led to novel, quantum functional devices and circuits. The enhanced functionality of these devices enables design of both digital and analog circuits with reduced complexity, size and better performance. For many of these applications, the study of the stability criteria and the development of comprehensive CAD model is of great importance for both the design and the development of new devices. In this paper we present the results of the modeling and investigation of instability for InGaAs/InAlAs/InGaAs tunnel diodes having different dimensions. Experimental results, which confirm the conclusions, are presented.

[1]  R. Hall,et al.  Tunnel Diodes , 1960, Nature.

[2]  Mark R. Barber,et al.  Microwave semiconductor devices and their circuit applications , 1969 .

[3]  N. El-Zein,et al.  A highly linear single balanced mixer based on heterojunction interband tunneling diode , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[4]  U. Auer,et al.  A novel 3-D integrated HFET/RTD frequency multiplier , 1996 .

[5]  N. El-Zein,et al.  X-band heterostructure interband tunneling FET (HITFET) VCOs , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[6]  K. M. Indlekofer,et al.  A vertical resonant tunneling transistor for application in digital logic circuits , 2001 .

[7]  G. Haddad,et al.  Power and stability limitations of resonant tunneling diodes , 1990 .

[8]  Gianfranco Manes,et al.  A proposal of a bi-directional amplifier based on tunneling diodes for RF tagging system , 2001 .

[9]  F. Morris,et al.  Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[10]  M. Deshpande,et al.  DC and RF characterization of different heterojunction interband tunneling diodes , 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

[11]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[12]  N. El-Zein,et al.  A comprehensive DC/RF tunnel diode model and its application to simulate HITFETs (heterostructure integrated tunneling FETs) and quantum-MMIC's , 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).