论文信息 - Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter

Design Considerations and Performance Test for SiC MOSFET Based 1000V / 1.5MHz Pulse Power Inverter

SiC device has supreme switching performance over Si device which helps to shrink the power converter filter size and improve the converter power density. In pulse power supply area, without the tight thermal dissipation limitations, higher voltage and higher frequency can be achieved. In this paper, a 1000V/1.5MHz 80kVA pulse power inverter is developed. Its design considerations and performance in such voltage and frequency level are discussed.

Chunhui Liu | Qin Lei | Chunhui Liu | Qin Lei

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