Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics

Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed. Keywords—Silicon carbide (SiC), SiC properties, high-voltage, high-temperature, high-frequency applications, high-temperature electronics, wide energy band-gap semiconductors.

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