论文信息 - A distributed, measurement based, nonlinear model of FETs for high frequencies applications

A distributed, measurement based, nonlinear model of FETs for high frequencies applications

For the first time, a FET nonlinear model, distributed along the gate length and extracted from pulsed I(V) and pulsed S-parameters measurements is presented. This model has led to a better prediction of power saturation mechanism and offers promising perspectives for intermodulation and nonlinear noise modeling at high microwave frequencies.

M. Prigent | R. Quere | J. Obregon | B. Mallet-Guy | Z. Ouarch

[1] E. Laporte,et al. Design of state of art low noise VCO using MMIC negative resistance modules , 1996 .

[2] H. Lin,et al. DC and transmission line models for a high electron mobility transistor , 1989 .

[3] Philippe Bouysse,et al. A novel, accurate load-pull setup allowing the characterization of highly mismatched power transistors , 1994 .

[4] J. Teyssier,et al. A new nonlinear I(V) model for FET devices including breakdown effects , 1994, IEEE Microwave and Guided Wave Letters.

[5] Raymond Quere,et al. An improved CAD oriented FET model for large-signal and noise applications , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[6] Michel Campovecchio,et al. A new coherent extraction method of FETS and HEMTS models for MMIC applications , 1994 .

[7] Giovanni Ghione,et al. Physics-based electron device modelling and computer-aided MMIC design , 1992 .