Magnetic field dependence of the spin relaxation length in spin light-emitting diodes

We investigate the spin relaxation length during vertical electron transport in spin-light emitting diode devices as a function of magnetic field strength at room temperature. In most publications on spin relaxation in optoelectronic devices, strong magnetic fields are used to achieve perpendicular-to-plane magnetization of the spin injection contacts. We show experimentally that high magnetic field strengths significantly reduce spin relaxation during transport to the active region of the device. We obtain a spin relaxation length of 27(3) nm in magnetic remanence and at room temperature, which nearly doubles at 2 T magnetic field strength.

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