Two-dimensional numerical analysis of stability criteria of GaAs FET's

Stability criteria of GaAs junction-gate FET's are studied by two-dimensional numerical analysis. The analysis covers the wide range of device geometry from the state of the art FET to the so-called Gunn effect digital devices. It is found that a GaAs FET exhibits either of the following three types of characteristics depending upon device geometry and doping concentration. First, for a thin channel with high doping concentration, the device tends to behave as a normal junction-gate FET with saturating current-voltage characteristics. This is even true when the n-l (device length) and n.d (device thickness) products exceed the previously accepted criteria for Gunn oscillation. Second, a stable negative resistance (SNR) is observed in devices with a moderate channel thickness. Third, for a thick channel, the device exhibits a Gunn oscillation with the domain propagating from the gate edge to the drain. These three categories of behavior are mapped on the nd plane with the help of simple analytic considerations. The map is found to compare well with experimental results.

[1]  W. Shockley,et al.  Negative resistance arising from transit time in semiconductor diodes , 1954 .

[2]  H. Kroemer.  Generalized proof of Shockley's positive conductance theorem , 1970 .

[3]  M. Reiser.  Two-dimensional analysis of substrate effects in junction f.e.t.s , 1970 .

[4]  C. P. Sandbank,et al.  Synthesis of complex electronic functions by solid state bulk effects , 1967 .

[5]  M. Reiser,et al.  Large-scale numerical simulation in semiconductor device modelling , 1972 .

[6]  P. S. Hauge.  Static negative resistance in Gunn effect materials with field-dependent carrier diffusion , 1971 .

[7]  P. N. Butcher.  Theory of stable domain propagation in the Gunn effect , 1965 .

[8]  C. Liechti,et al.  Design and Performance of Microwave Amplifiers with GaAs Schottky-Gate Field-Effect Transistors , 1974 .

[9]  G. Kino,et al.  The effect of small transverse dimensions on the operation of Gunn devices , 1968 .

[10]  H. W. Thim,et al.  Computer Study of Bulk GaAs Devices with Random One‐Dimensional Doping Fluctuations , 1968 .

[11]  B. Himsworth,et al.  A two-dimensional analysis of indium phosphide junction field effect transistors with long and short channels , 1972 .

[12]  W. Baechtold,et al.  Si and GaAs 0.5 μm-gate Schottky-barrier field-effect transistors , 1973 .

[13]  T. Isobe,et al.  Two-dimensional domain dynamics in a planar Schottky-gate Gunn-effect device , 1975, IEEE Transactions on Electron Devices.

[14]  W. Baechtold,et al.  X and Ku band GaAs m.e.s.f.e.t. , 1972 .

[15]  J. G. Ruch,et al.  Electron dynamics in short channel field-effect transistors , 1972 .

[16]  Michiharu Nakamura.  Frequency Limit of LSA-Mode Oscillations Estimated from the Hot Electron Problems in the High Frequency Electric Field , 1969 .

[17]  H. Kroemer.  Negative conductance in semiconductors , 1968, IEEE Spectrum.