Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications
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D. Suhre | D. Zelmon | F. Hopkins | M. Marable | V. Balakrishna | R. Meyer | N. Fernelius | N. Singh
[1] Gopal C. Bhar,et al. Nonlinear optical laser devices using GaSe , 1995 .
[2] N. Fernelius. Properties and Bibliography of GaSe , 1994 .
[3] Konstantin L. Vodopyanov,et al. HIGH EFFICIENCY MIDDLE IR PARAMETRIC SUPERRADIANCE IN ZnGeP2 AND GaSe CRYSTALS PUMPED BY AN ERBIUM LASER , 1991 .
[4] C. Tatsuyama,et al. Barrier formation at Cu, Ag and Au-GaSe layered semiconductors , 1989 .
[5] N. Kambe,et al. GaSe single crystal growth by iodine vapor transport , 1986 .
[6] A. Balchin,et al. Optimisation of conditions for the growth of gallium selenide and gallium sulphide by iodine vapour transport , 1978 .
[7] A. Prokhorov,et al. Difference frequency generation in a GaSe crystal with continuous tuning in the 560-1050 cm -1 range , 1976 .
[8] L. Vasanelli,et al. A particular application of GaSe semiconductor detectors in the neutrino experiment at CERN , 1975 .
[9] W. Y. Liang. Optical anisotropy in GaSe , 1975 .
[10] W. V. D. Vleuten,et al. New polytypes in vapour grown GaSe , 1975 .
[11] L. Vasanelli,et al. GaSe as nuclear particle detector , 1974 .
[12] Ryuichi Mori,et al. Phase Study on Binary System Ga-Se , 1974 .
[13] V. L. Cardetta,et al. Growth and habit of GaSe crystals obtained from vapour by various methods , 1972 .
[14] G. Boyd,et al. Parametric interaction of focused Gaussian light beams , 1968 .
[15] J. Brebner,et al. Electrical resistivity and hall effect of single crystals of GaTe and GaSe , 1962 .
[16] B. Novikov,et al. The fine structure of the spectral curves of photoconductivity and luminescence excitation and its correlation to the exciton absorption spectrum , 1961 .
[17] R. Bube,et al. Photoconductivity of Gallium Selenide Crystals , 1959 .
[18] A. Yariv. Introduction to optical electronics , 1971 .
[19] E. Mooser,et al. Semiconductors of the type AIIIBVI , 1959 .