VaLLR: Threshold Voltage Distribution Aware LLR Optimization to Improve LDPC Decoding Performance for 3D TLC NAND Flash
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Meng Zhang | Changsheng Xie | Lanlan Cui | Fei Wu | Xiaojian Liu | C. Xie | Fei Wu | Meng Zhang | Xiaojian Liu | Lanlan Cui
[1] Hsie-Chia Chang,et al. A 45nm 6b/cell charge-trapping flash memory using LDPC-based ECC and drift-immune soft-sensing engine , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
[2] Ken Takeuchi,et al. Write and Read Frequency-Based Word-Line Batch $V_{\mathrm{TH}}$ Modulation for 2-D and 3-D-TLC NAND Flash Memories , 2018, IEEE Journal of Solid-State Circuits.
[3] Robert G. Gallager,et al. Low-density parity-check codes , 1962, IRE Trans. Inf. Theory.
[4] Qiao Li,et al. Improving LDPC performance via asymmetric sensing level placement on flash memory , 2017, 2017 22nd Asia and South Pacific Design Automation Conference (ASP-DAC).
[5] Fei Wu,et al. REAL: A retention error aware LDPC decoding scheme to improve NAND flash read performance , 2016, 2016 32nd Symposium on Mass Storage Systems and Technologies (MSST).
[6] Onur Mutlu,et al. Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives , 2017, Proceedings of the IEEE.
[7] Chih-Tsun Huang,et al. Reliability analysis and improvement for multi-level non-volatile memories with soft information , 2011, 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC).