Characterization of the noise spectrum of laterally coupled diode lasers

The study of noise spectrum, in particular of the RIN, in semiconductor diodes lasers is a powerful tool to determine the proper frequencies and the operation regimes of the device. Following this a study of the RIN is of major importance to characterize the laterally coupled diode lasers. In this work a study of the noise spectrum dependence with the lateral separation between waveguides as well as its dependence with relative bias current applied is made. These results combined and compared with spectrally resolved near and far field allows the definition of which are the operating regimes of the device.