Status and Outlook of MRAM Memory Technology (Invited)

This paper provide an overview of the recent progress and the nature outlook of MRAM technology. Details of the operation, performance and reliability of Freescale's commercial 4Mbit MRAM device will be presented. Operation and reliability results demonstrating the extension of toggle MRAM to meet industrial and automotive requirements are presented, and new research results on higher-performance materials and advanced scaling approaches are discussed

[1]  R. Sinclair,et al.  Scaling and power of thermally written MRAM , 2004, Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.

[2]  Saied N. Tehrani,et al.  MgO-based tunnel junction material for high-speed toggle magnetic random access memory , 2006, IEEE Transactions on Magnetics.

[3]  J. Slaughter,et al.  High speed toggle MRAM with mgO-based tunnel junctions , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[4]  M. Hosomi,et al.  A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[5]  R. W. Dave,et al.  A 4-Mb toggle MRAM based on a novel bit and switching method , 2005, IEEE Transactions on Magnetics.

[6]  Young Chung,et al.  Resistance Drift of Aluminum Oxide Magnetic Tunnel Junction Devices , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[7]  P. Freitas,et al.  Low-current blocking temperature writing of double-barrier MRAM cells , 2004, IEEE Transactions on Magnetics.