论文信息 - A New Propagation Delay Time Bridge for the Study of Displacement Damage Effects in Bipolar Transistors

A New Propagation Delay Time Bridge for the Study of Displacement Damage Effects in Bipolar Transistors

An entirely new bridge circuit for the measurement of the junction transistors total propagation delay time is described. Unlike previous methods, this bridge is calibrated in time units and thus it provides a direct readout of delay time. An experiment to evaluate the bridge as a one-test acceptance screening tool in neutron hardness assurance programs is described. Finally, a very brief discussion of propagation delay time and its interpretation is presented as an appendix.

W. H. Sullivan | J. H. Weinlein

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