Influence of indium addition on electromigration behavior of solder joint

The electromigration (EM) behavior of the Cu/Sn-In/Cu solder model strip was investigated under the conditions of high electrical current density (10 kA/cm^2) at various temperatures. The composition of indium (In) was 0, 4, 8, and 16 in wt%. The interconnection of Sn-In solder alloys with a Cu substrate was prepared by reflow soldering at 250 °C. Micro structural analysis confirmed that primary intermetallic compound formed at the interface of the Cu/Sn-In strip was Cu_6(In,Sn)_5 regardless of In contents. Sn grain size became finer as In content increased. After current stressing, electrical failure was caused by the formation of voids and cracks at the cathode because of the migration of Cu atoms. Sn-16In alloy that has fine grain structure exhibits excellent EM resistance primarily due to the retardation of Cu migration.

[1]  K. Suganuma,et al.  Effects of the crystallographic orientation of Sn on the electromigration of Cu/Sn-Ag-Cu/Cu ball joints , 2011 .

[2]  Sun-Kyoung Seo,et al.  Crystal orientation of β-Sn grain in Ni(P)/Sn-0.5Cu/Cu and Ni(P)/Sn-1.8Ag/Cu joints , 2010 .

[3]  Y. C. Chan,et al.  Failure mechanisms of solder interconnects under current stressing in advanced electronic packages , 2010 .

[4]  C. Y. Liu,et al.  Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces , 2009, 2009 11th Electronics Packaging Technology Conference.

[5]  A. Wu,et al.  Determination of Average Failure Time and Microstructural Analysis of Sn-Ag-Bi-In Solder Under Electromigration , 2009 .

[6]  Hongwen He,et al.  Effect of small amount of rare earth addition on electromigration in eutectic SnBi solder reaction couple , 2009, Journal of Materials Science.

[7]  Paul A. Lauro,et al.  Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders , 2008 .

[8]  A. Wu,et al.  Direct observation and kinetic analysis of grain rotation in anisotropic tin under electromigration , 2008 .

[9]  Chih-Ming Chen,et al.  Electromigration of Sn-9wt.%Zn Solder , 2008 .

[10]  Shih-Ming Kuo,et al.  The Hillock Formation in a Cu/Sn-9Zn/Cu Lamella upon Current Stressing , 2007 .

[11]  J. Shang,et al.  Current-Induced Phase Partitioning in Eutectic Indium-Tin Pb-Free Solder Interconnect , 2007 .

[12]  Kimihiro Yamanaka,et al.  Studies on solder bump electromigration in Cu/Sn-3Ag-0.5Cu/Cu system , 2007, Microelectron. Reliab..

[13]  K. Suganuma,et al.  Solder electromigration in Cu/In/Cu flip chip joint system , 2007 .

[14]  Seungbae Park,et al.  Measurement of deformations in SnAgCu solder interconnects under in situ thermal loading , 2007 .

[15]  Farhang Pourboghrat,et al.  Incremental recrystallization/grain growth driven by elastic strain energy release in a thermomechanically fatigued lead-free solder joint , 2007 .

[16]  H.-J. Engelmann,et al.  Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects , 2007 .

[17]  Chih-Ming Chen,et al.  Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint , 2007 .

[18]  S. W. Liang,et al.  Electromigration issues in lead-free solder joints , 2006 .

[19]  K. Tu,et al.  Electromigration and critical product in eutectic SnPb solder lines at 100°C , 2006 .

[20]  Y. C. Chuang,et al.  Thermomigration in eutectic SnPb alloy , 2006 .

[21]  K. Tu,et al.  Electromigration-induced grain rotation in anisotropic conducting beta tin , 2005 .

[22]  Tomi Laurila,et al.  Interfacial reactions between lead-free solders and common base materials , 2005 .

[23]  Y. Chan,et al.  Effect of indium addition in Sn-rich solder on the dissolution of Cu metallization , 2005 .

[24]  K. N. Subramanian,et al.  Grain-boundary character and grain growth in bulk tin and bulk lead-free solder alloys , 2004 .

[25]  N. Tamura,et al.  Electromigration-induced microstructure evolution in tin studied by synchrotron x-ray microdiffraction , 2004 .

[26]  King-Ning Tu,et al.  Electromigration failure in flip chip solder joints due to rapid dissolution of copper , 2003 .

[27]  J. Lloyd.  Electromigration induced resistance decrease in Sn conductors , 2003 .

[28]  K. Tu.  Recent advances on electromigration in very-large-scale-integration of interconnects , 2003 .

[29]  King-Ning Tu,et al.  Mean-time-to-failure study of flip chip solder joints on Cu/Ni(V)/Al thin-film under-bump-metallization , 2003 .

[30]  King-Ning Tu,et al.  Physics and materials challenges for lead-free solders , 2003 .

[31]  Ricky W. Chuang,et al.  High-temperature non-eutectic indium-tin joints fabricated by a fluxless process , 2002 .

[32]  King-Ning Tu,et al.  Current-crowding-induced electromigration failure in flip chip solder joints , 2002 .

[33]  D. R. Frear,et al.  Electromigration of eutectic SnPb and SnAg3.8Cu0.7 flip chip solder bumps and under-bump metallization , 2001 .

[34]  T. Chuang,et al.  Interfacial reactions between liquid indium and Au-deposited substrates , 2000 .

[35]  Fuh-Sheng Shieu,et al.  Intermetallic phase formation and shear strength of a Au-In microjoint , 1999 .

[36]  D. C. Yeh,et al.  Extreme Fast-Diffusion System: Nickel in Single-Crystal Tin , 1984 .

[37]  K. V. Reddy,et al.  Electromigration in indium thin films , 1984 .

[38]  F. Huang.  Diffusion of Sb^ , Cd^ , Sn^ , and Zn^ in Tin , 1974 .

[39]  David Turnbull,et al.  Interstitial Diffusion of Copper in Tin , 1967 .

[40]  A. Sawatzky.  Diffusion of Indium in Tin Single Crystals , 1958 .

[41]  H. S. Liu,et al.  Experimental determination and thermodynamic calculation of the phase equilibria in the Cu-In-Sn system , 2001 .

[42]  K. Niwa,et al.  Solder joint reliability of indium-alloy interconnection , 1995 .

[43]  Lawrence H. Bennett,et al.  Binary alloy phase diagrams , 1986 .